Strain-Engineered MOSFETs

Name: Strain-Engineered MOSFETs
Rating: 4.846153736114502 (13 reviews)

C.K. Maiti · T.K. Maiti

okt. 2018 · CRC Press

4,8

13 umsagnir

Rafbók

320

Síður

Gjaldgeng

Einkunnir og umsagnir eru ekki staðfestar Nánar

Um þessa rafbók

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale.

This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization.

Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Einkunnir og umsagnir

4,8

13 umsagnir

Um höfundinn

C K Maiti (Author) , T K Maiti (Indian Institute of Technology, Kharagpur, India Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur) (Author)

Gefa þessari rafbók einkunn.

Segðu okkur hvað þér finnst.

Upplýsingar um lestur

Snjallsímar og spjaldtölvur

Settu upp forritið Google Play Books fyrir Android og iPad/iPhone. Það samstillist sjálfkrafa við reikninginn þinn og gerir þér kleift að lesa með eða án nettengingar hvar sem þú ert.

Fartölvur og tölvur

Hægt er að hlusta á hljóðbækur sem keyptar eru í Google Play í vafranum í tölvunni.

Lesbretti og önnur tæki

Til að lesa af lesbrettum eins og Kobo-lesbrettum þarftu að hlaða niður skrá og flytja hana yfir í tækið þitt. Fylgdu nákvæmum leiðbeiningum hjálparmiðstöðvar til að flytja skrár yfir í studd lesbretti.

Tilkynna ólöglegt efni